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RMPA39000
June 2004
RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
General Description
The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA39000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
* 24dB small signal gain (typ.) * 29dBm saturated power out (typ.) * Circuit contains individual source vias * Chip size 4.28mm x 2.90mm x 50m
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 +8 1092 +20 -30 to +85 -55 to +125 17 Units V V V mA dBm C C C/W
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Electrical Characteristics 50 system, Vd = +5V, Quiescent current (Idq) = 700mA
Parameter Frequency Range Gain Supply Voltage (Vg)1 Gain Small Signal at Pin = 0dBm Gain Variation vs. Frequency Power Output at 1dB Compression Power Output Saturated (Pin = +13dBm) Drain Current at Pin = 0dBm Drain Current at P1dB Compression Drain Current at Psat (Pin = +13dBm) Power Added Efficiency (PAE) at P1dB OIP3 (17dBm/Tone) (10 MHz Tone Sep.) Input Return Loss (Pin = -10dBm) Output Return Loss (Pin = -10dBm)
Note: 1. Typical range of the negative gate voltage is -0.5V to 0.0V to set typical Idq of 700mA.
Min 37 20
Typ -0.15 24 1 28 29 700 730 750 17 36 8 7
Max 40
27.5
Units GHz V dB dB dBm dBm mA mA mA % dBm dB dB
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap between the chip and the substrate material.
DRAIN SUPPLY (Vd = +5V) (VDA & VDB)
MMIC CHIP
RF IN RF OUT
GROUND (Back of the Chip)
GATE SUPPLY (VGA & VGB)
Figure 1. Functional Block Diagram
2.490 2.580 2.598
1.655 1.475 1.295
0.370
0.352 0.0 0.0 0.102 0.202 4.002 4.280 4.141
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 4.28mm x 2.90mm x 50m. Back of chip is RF and DC Ground)
(c)2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
DRAIN SUPPLY (Vd = +5V) (Connect to both VDA & VDB) 10000pF
L BOND WIRE Ls 10 0pF
L MMIC CHIP
RF IN
RF OUT
L GROUND (Back of Chip) BOND WIRE Ls 100pF L
10000pF GATE SUPPLY (Vg) (VGA and/or VGB)
Figure 3. Recommended Application Schematic Circuit Diagram
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Vg (Negative) 2 mil Gap
10,000 pF
10,000 pF
Vd (Positive) Die-Attach 80Au/20Sn
100 pF 5mil Thick Alumina 50
100 pF
5 mil Thick Alumina 50
RF Input
RF Output
L< 0.015" (4 Plcs)
100 pF 10,000 pF Vg (Negative)
100 pF
Vd (Positive)
10,000 pF
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
Figure 4. Recommended Assembly and Bonding Diagram
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 700mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Note: An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.
D3 D1N6098 +6V D2 D1N6098 R1 3.0k
+ V+ 0 1 2
C1 0.1F
R3 1.0k
*
U2
AD820/AD
V-
LM2941T U1A 7400
3 2 CNT 5 4 IN OUT 3 GND
+2.62V R4 1.2k
-
MMIC_+VDD C3 22F
R2 6.8k
0
0
C2 0.47F R6
0 1k
ADJ 1
R5 3k
0
0
*Adj. For -Vg
MMIC_-VG C4 0.1F R7 8.2k R8 1.0k
0 0
-5V
*-5V Off: +3.33V
-5V Off: +1.80V
0
C5 0.1F
Figure 5. Application Information Auto-Bias Circuit
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Typical Characteristics
RMPA39000 Gain vs. Frequency Vd = 5V, Id = 700mA
25.0
24.5
24.0 GAIN (dB)
23.5
23.0
22.5
22.0 36.5
37.0
37.5
38.0
3 8.5 FREQUENCY (GHz)
39.0
39.5
40.0
40.5
RMPA39000 Saturated Pout vs. Frequency Vd = 5V, Id = 700mA
30.0
29.5
Pout (dBm)
29.0
28.5
28.0 36.5
37.0
37.5
38.0
3 8.5 FREQUENCY (GHz)
39.0
39.5
40.0
40.5
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Typical Characteristics (Continued)
RMPA39000 S-Parameters vs. Frequency Vd = 5V, Idq = 700mA
30 S21 20
10
Sij (dB)
S11 0 S22 -10
-20
-30 20 25 30 35
FREQUENCY (GHz)
40
45
50
Output Power, Power Added Efficiency, Gain and Compression Bias Conditions: Vd = 5V, Iq = 700mA, F = 37GHz
30 Pout Max: 27.98dBm GAIN 25 X
GAIN & COMP (dB), PAE (%)
RMPA39000 Rev. D
20
15
Pout (dBm)
20 Pout 15 X PAE
10
5
10
X
X
X
COMP 0
5 -20
-5 -15 -10 -5 0
Pin (dBm)
5
10
15
20
(c)2004 Fairchild Semiconductor Corporation
RMPA39000
Typical Characteristics (Continued)
RMPA39000 OIP3 vs. Output Power/Tone Vd = 5V, Idq = 700mA, Tone Sep 10 MHz
38
37
36 OIP3 (dBm)
39GHz
38GHz
35
40GHz 37GHz
34
33
32 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Pout/TONE (dBm)
(c)2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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